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Abstract

This paper proposes a novel LCD false defect detection method that involves integrating shorting-bar and Taguchi technologies. When both the gate and data lines of an LCD are activated using a shorting bar technique, and an illuminator is applied to the background panel, if all thin-film transistor (TFT) arrays are free of point defect failures, then the lights from the illuminator can penetrate the scanned pixels (i.e., a bright, complete image should appear on the display). Otherwise, there are defects in the TFT cells exhibiting dark patterns. In this study, the P-diagram of the Taguchi design of experiment method was integrated to simplify the conditions for the TFT tester design. The resulting real defect ratio is increased by 90%, whereas the false defect ratio is increased by only 0.34%. Notably, the line defect location accuracy can also be increased by adding special runs to the corresponding test waveforms and patterns.

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