A HIGH FIGURE-OF-MERIT LOW PHASE NOISE 15-GHz CMOS VCO

Authors

Yao-Chian Lin, Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan, R.O.C.
Mei-Ling Yeh, Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan, R.O.C.Follow
Chung-Cheng Chang, Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan, R.O.C

Abstract

A monolithic inductor-capacitor tank (LC-tank), voltagecontrolled oscillator (VCO) with high figure-of-merit (FOM), low phase noise, and low power consumption is presented for Ku-Band applications. The p-type metal-oxide-semiconductor (PMOS) differential cross-coupled topology is adopted in this design to reduce the phase noise. The measured phase noise at 1 MHz offset is -116.6 dBc/Hz at the frequency of 15.57 GHz. The excellent FOM is -192.66 dBc/Hz and the power dissipation is 6 mW. The tuning range is approximately 290 MHz with control voltage of 0 to 1.8 V. The chip size is 0.51 × 0.74 mm2 . The VCO was implemented in the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 µm complementary metal-oxide-semiconductor (CMOS) process.

Recommended Citation

Lin, Yao-Chian; Yeh, Mei-Ling; and Chang, Chung-Cheng (2013) "A HIGH FIGURE-OF-MERIT LOW PHASE NOISE 15-GHz CMOS VCO," Journal of Marine Science and Technology: Vol. 21: Iss. 1, Article 11.
DOI: 10.6119/JMST-011-1230-1
Available at: https://jmstt.ntou.edu.tw/journal/vol21/iss1/11